Display apparatus

ABSTRACT

Disclosed herein is a display apparatus, including, a panel having a plurality of pixels disposed in a matrix and each including a self-luminous element for emitting light, the panel including first to third conductive layers laminated in order on a supporting substrate, a first contact portion between the first and second conductive layers and a second contact portion between the second and third conductive layers being disposed at the same position in a planar direction.

CROSS REFERENCE TO RELATED APPLICATIONS

This application is a Continuation Application of application Ser. No.15/165,226, filed May 26, 2016, to be issued as U.S. Pat. No. 9,716,133on Jul. 25, 2017, which is a Continuation Application of applicationSer. No. 14/818,043, filed Aug. 4, 2015, now U.S. Pat. No. 9,379,144,issued on Jun. 28, 2016, which is a Continuation Application ofapplication Ser. No. 12/659,441, filed Mar. 9, 2010, now U.S. Pat. No.9,123,292, issued Sep. 1, 2015, which claims priority to JapanesePriority Patent Application JP 2009-097083, filed in the Japan PatentOffice on Apr. 13, 2009, the entire contents of which are herebyincorporated by reference.

BACKGROUND OF THE INVENTION 1. Field of the Invention

This invention relates to a display apparatus, and more particularly toa display apparatus which includes a conductive layer having two contactportions.

2. Description of the Invention

A panel of the planar self-luminous type which uses an organicelectroluminescence (EL) device as a light emitting element has been andis being developed energetically in recent years. The organic EL devicehas a diode characteristic and utilizes a phenomenon that, if anelectric field is applied to an organic thin film, then the organic thinfilm emits light. Since the organic EL device is a self-luminous devicewhose power consumption is low because it is driven by an appliedvoltage less than or equal to 10 V and which itself emits light.Therefore, the organic EL device has a characteristic that it does notrequire an illuminating member and reduction in weight and thickness iseasy. Further, since the response speed of the organic EL device is ashigh as approximately several μs, the EL panel has an advantage that anafter-image upon display of a dynamic image does not appear.

Among various EL panels, a panel of the active matrix type wherein athin film transistor (TFT) as a driving element is formed in anintegrated state in each pixel is being developed energetically. Anactive matrix EL panel is disclosed, for example, in Japanese PatentLaid-Open Nos. 2003-255856, 2003-271095, 2004-133240, 2004-029791 and2004-093682.

For active matrix EL panels in recent years, enhancement in definitionis demanded.

SUMMARY OF THE INVENTION

However, in a known active matrix EL panel, where it is necessary to useone conductive layer to establish contact between two other conductivelayers, the two contact portions are disposed at positions spaced fromeach other in a planar direction in order to prevent contact failure.Therefore, the conductive layer having the two contact portions isobliged to have a great area, and a region of one pixel cannot beutilized effectively.

Therefore, it is desirable to provide a display apparatus wherein thearea of one conductive layer having two contact portions can be reduced.

According to an embodiment of the present invention, there is provided adisplay circuit including a panel having a plurality of pixels disposedin a matrix and each including a self-luminous element for emittinglight, the panel including first to third conductive layers laminated inorder on a supporting substrate, a first contact portion between thefirst and second conductive layers and a second contact portion betweenthe second and third conductive layers being disposed at the sameposition in a planar direction.

In the display apparatus, the first to third conductive layers includedin the panel on which the pixels each having the self-luminous elementfor emitting light are disposed in a matrix are laminated in order onthe supporting substrate. Further, the first contact portion between thefirst and second conductive layers and the second contact portionbetween the second and third conductive layers are disposed at the sameposition in a planar direction.

With the display apparatus, the area of that one of the conductivelayers which has the two contact portions can be reduced.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 is a block diagram showing an example of a configuration of adisplay apparatus to which an embodiment of the present invention isapplied;

FIG. 2 is a block diagram showing an array of colors of pixels of an ELpanel shown in FIG. 1;

FIG. 3 is a block diagram showing a configuration of an equivalentcircuit of a pixel of the display apparatus of FIG. 1;

FIG. 4 is a timing chart illustrating operation of the panel of thedisplay apparatus of FIG. 1;

FIG. 5 is a schematic sectional view of a driving transistor of an ELpanel hitherto known;

FIG. 6 is a schematic sectional view illustrating a step appearing in afilm;

FIG. 7 is a plan view of pixels from which an EL panel hitherto known isformed;

FIGS. 8 and 9 are sectional views of a driving transistor of a pixel infirst and second embodiments of the EL panel of FIG. 1;

FIG. 10 is a top plan view of a contact portion shown in FIG. 9; and

FIG. 11 is a plan view of the EL panel shown in FIG. 1.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT [Configuration of theDisplay Apparatus]

FIG. 1 shows an example of a configuration of a display apparatus towhich an embodiment of the present invention is applied.

Referring to FIG. 1, the display apparatus 1 shown is, for example, atelevision receiver and displays an image corresponding to an imagesignal inputted thereto on an EL panel 100. The EL panel 100 uses anorganic EL (electroluminescence) device as a self-luminous element. TheEL panel 100 is incorporated as a panel module, which includes a driverIC (integrated circuit) including source drivers and gate drivers, inthe display apparatus 1. The display apparatus 1 further includes apower supply circuit, an image LSI (Large Scale Integration) and soforth not shown. It is to be noted that the EL panel 100 of the displayapparatus 1 can be utilized also as a display section for a portabletelephone set, a digital still camera, a digital video camera, a printerand so forth.

The EL panel 100 includes a pixel array section 102 having a pluralityof pixels 101, a horizontal selector (HSEL) 103, a write scanner (WSCN)104 and a power supply scanner (DSCN) 105.

In the pixel array section 102, N×M (N and M are integral values higherthan 1 and independent of each other) pixels 101-(1,1) to 101-(N,M) aredisposed in an array. It is to be noted that, from a restriction inillustration, only some of the pixels 101-(1,1) to 101-(N,M) are shownin FIG. 1.

The EL panel 100 further includes M scanning lines WSL10-1 to WSL10-M, Mpower supply lines DSL10-1 to DSL10-M and N image signal lines DTL10-1to DTL10-N.

It is to be noted that, in the following description, where there is nonecessity to specifically distinguish the scanning lines WSL10-1 toWSL10-M, each of them is referred to simply as scanning line WSL10.Further, where there is no necessity to specifically distinguish theimage signal lines DTL10-1 to DTL10-N, each of them is referred tosimply as image signal line DTL10. Further, where there is no necessityto specifically distinguish the pixels 101-(1,1) to 101-(N,M) and thepower supply lines DSL10-1 to DSL10-M, each of them is referred tosimply as pixel 101 and power supply line DSL10, respectively.

The horizontal selector 103, write scanner 104 and power supply scanner105 operate as a driving section for driving the pixel array section102.

The pixels 101-(1,1) to 101-(N,1) in the first row from among the pixels101-(1,1) to 101-(N,M) are connected to the write scanner 104 and thepower supply scanner 105 by the scanning line WSL10-1 and the powersupply line DSL10-1, respectively. Further, the pixels 101-(1,M) to101-(N,M) of the Mth row from among the pixels 101-(1,1) to 101-(N,M)are connected to the write scanner 104 and the power supply scanner 105by the scanning line WSL10-M and the power supply line DSL10-M,respectively. Also the other pixels 101 juxtaposed in the direction of arow in the pixels 101-(1,1) to 101-(N,M) are connected in a similarconnection scheme.

Further, the pixels 101-(1,1) to 101-(1,M) in the first column fromamong the pixels 101-(1,1) to 101-(N,M) are connected to the horizontalselector 103 by the image signal line DTL10-1. The pixels 101-(N,1) to101-(N,M) in the Nth column from among the pixels 101-(1,1) to 101-(N,M)are connected to the horizontal selector 103 by the image signal lineDTL10-N. Also the other pixels 101 juxtaposed in the column directionfrom among the pixels 101-(1,1) to 101-(N,M) are connected in a similarconnection scheme.

The write scanner 104 supplies sequential selection control signals tothe scanning lines WSL10-1 to WSL10-M in a horizontal period (1H) toline-sequentially scan the pixels 101 in a unit of a row. The powersupply scanner 105 supplies a power supply voltage of a first potentialVcc or a second potential Vss illustrated in FIG. 4 to the power supplylines DSL10-1 to DSL10-M in synchronism with the line-sequentialscanning. The horizontal selector 103 supplies a signal potential Vsigcorresponding to an image signal and a reference potential Vofsillustrated in FIG. 4 switchably to the image signal lines DTL10-1 toDTL10-M in the columns within each horizontal period (1H) in synchronismwith the line-sequential scanning.

[Array Configuration of the Pixels 101]

FIG. 2 shows an array of colors of light emitted from the pixels 101 ofthe EL panel 100.

It is to be noted that FIG. 2 is different from FIG. 1 in that thescanning lines WSL10 and the power supply lines DSL10 are shownconnected to the pixels 101 from the lower side. To which side of thepixels 101 the scanning lines WSL10, power supply lines DSL10 and imagesignal lines DTL10 are connected can be changed suitably in accordancewith the wiring line layout. Also the arrangement of the horizontalselector 103, write scanner 104 and power supply scanner 105 withrespect to the pixel array section 102 can be suitably changedsimilarly.

Each of the pixels 101 of the pixel array section 102 emits light of oneof the primary colors of red (R), green (G) and blue (B). The colors arearrayed such that, for example, red, green and blue are arrayed in orderin the direction of a row, but in the direction of a column, the samecolor appears in the same column. Accordingly, the pixels 101 correspondto so-called subpixels, and one pixel as a unit of display is formedfrom three pixels 101 of red, green and blue juxtaposed in the directionof a row, that is, in the leftward and rightward direction in FIG. 2. Itis to be noted that the array of colors of the EL panel 100 is notlimited to the specific array shown in FIG. 2.

[Detailed Circuit Configuration of the Pixels 101]

FIG. 3 shows a configuration of an equivalent circuit of a pixel circuitof one of the N×M pixels 101 included in the EL panel 100.

It is to be noted that, if the pixel 101 shown in FIG. 3 is a pixel101-(n, m) (n=1, 2, . . . , N and m=1, 2, . . . , M), then the scanningline WSL10, image signal line DTL10 and power supply line DSL10 are suchas follows. In particular, the scanning line WSL10, image signal lineDTL10 and power supply line DSL10 are the scanning line WSL10-n, imagesignal line DTL10-n and power supply line DSL10-m corresponding to thepixel 101-(n,m), respectively.

The pixel 101 shown in FIG. 3 includes a sampling transistor 31, adriving transistor 32, an accumulating capacitor 33, a light emittingelement 34, and an auxiliary capacitor 35. Further, in FIG. 3, also acapacitance component which the light emitting element 34 has is shownas a light emitting element capacitor 34B. Here, the accumulatingcapacitor 33, light emitting element capacitor 34B and auxiliarycapacitor 35 have capacitance values Cs, Coled and Csub, respectively.

The sampling transistor 31 is connected at the gate thereof to thescanning line WSL10 and at the drain thereof to the image signal lineDTL10. Further, the sampling transistor 31 is connected at the sourcethereof to the gate of the driving transistor 32.

The driving transistor 32 is connected at one of the source and thedrain thereof to the anode of the light emitting element 34 and at theother of the source and the drain thereof to the power supply lineDSL10. The accumulating capacitor 33 is connected between the gate ofthe driving transistor 32 and the anode of the light emitting element34. Further, the light emitting element 34 is connected at the cathodethereof to a wiring line 36 which is set to a predetermined potentialVcat. The potential Vcat is the ground (GND) level, and accordingly, thewiring line 36 is a grounding line.

The auxiliary capacitor 35 is provided to supplement the capacitancecomponent of the light emitting element 34, that is, the light emittingelement capacitor 34B and is connected in parallel to the light emittingelement 34. In particular, the auxiliary capacitor 35 is connected atone of electrodes thereof to the anode side of the light emittingelement 34 and at the other electrode thereof to the cathode side of thelight emitting element 34. Where the auxiliary capacitor 35 is providedand retains a predetermined potential in this manner, the input gain ofthe driving transistor 32 can be improved. Here, the input gain of thedriving transistor 32 is a ratio of a rise amount of the sourcepotential Vs with respect to a rise amount of the gate potential Vg ofthe driving transistor 32 within a writing+mobility correction period T₅hereinafter described with reference to FIG. 4.

The sampling transistor 31 and the driving transistor 32 are N-channeltransistors. Therefore, the sampling transistor 31 and the drivingtransistor 32 can be formed from amorphous silicon which can be producedat a lower cost than low temperature polycrystalline silicon.Consequently, the pixel circuit can be produced at a reduced cost.Naturally, the sampling transistor 31 and the driving transistor 32 mayotherwise be formed from low temperature polycrystalline silicon orsingle crystal silicon.

The light emitting element 34 is formed from an organic EL element. Theorganic EL element is a current-driven light emitting element having adiode characteristic. Therefore, the light emitting element 34 emitslight of a gradation which depends upon the current value Ids suppliedthereto.

In the pixel 101 configured in such a manner as described above, thesampling transistor 31 is turned on or rendered conducting in responseto a selection control signal from the scanning line WSL10 and samplesan image signal of the signal potential Vsig corresponding to agradation through the image signal line DTL10. The accumulatingcapacitor 33 accumulates and retains charge supplied thereto from thehorizontal selector 103 through the image signal line DTL10. The drivingtransistor 32 is supplied with current from the power supply line DSL10having the first potential Vcc and supplies driving current Ids to thelight emitting element 34 in response to the signal potential Vsigretained in the accumulating capacitor 33. The predetermined drivingcurrent Ids flows to the light emitting element 34, and the pixel 101emits light.

The pixel 101 has a threshold value correction function. The thresholdvalue correction function is a function of causing the accumulatingcapacitor 33 to retain a voltage corresponding to a threshold voltageVth of the driving transistor 32. Where the threshold value correctionfunction is exhibited, an influence of the threshold voltage Vth of thedriving transistor 32 which makes a cause of a dispersion for each pixelof the EL panel 100 can be canceled.

The pixel 101 has a mobility correction function in addition to thethreshold value correction function described above. The mobilitycorrection function is a function of applying, when the signal potentialVsig is retained in the accumulating capacitor 33, correction to themobility p of the driving transistor 32.

Furthermore, the pixel 101 has a bootstrap function. The bootstrapfunction is a function of causing the gate potential Vg to interlockwith the variation of the source potential Vs of the driving transistor32. Where the bootstrap function is exhibited, the voltage Vgs betweenthe gate and the source of the driving transistor 32 can be maintainedfixed.

[Operation of the Pixel 101]

FIG. 4 illustrates operation of the pixel 101.

In particular, FIG. 4 illustrates a voltage variation of the scanningline WSL10, power supply line DSL10 and image signal line DTL10 withrespect to the same time axis, which extends in the horizontal directionin FIG. 4 and a corresponding variation of the gate potential Vg and thesource potential Vs of the driving transistor 32.

Referring to FIG. 4, the period to time t₁ is a light emitting period T₁within which emission of light in the preceding horizontal period (1H)continues.

A period from time t₁ at which the light emitting period T₁ ends to timet₂ is a threshold value correction preparation period T₃ within whichthe gate potential Vg and the source potential Vs of the drivingtransistor 32 are initialized to make preparations for a thresholdvoltage correction operation.

Within the threshold value correction preparation period T₂, at time t₁,the power supply scanner 105 changes over the potential of the powersupply line DSL from the first potential Vcc which is a high potentialto the second potential Vss which is a low potential. Here, thethreshold voltage of the light emitting element 34 is represented byVthel. At this time, if the second potential Vss is set so as to satisfyVss<Vthel+Vcat, then since the source potential Vs of the drivingtransistor 32 becomes substantially equal to the second potential Vss,the light emitting element 34 is placed into a reversely biased stateand stops emission of light.

Then at time t₂, the write scanner 104 changes over the potential of thescanning line WSL to a high potential to turn on the sampling transistor31. Consequently, the gate potential Vg of the driving transistor 32 isreset to the reference potential Vofs, and besides the source potentialVs is reset to the second potential Vss of the image signal line DTL.

At this time, the gate-source voltage Vgs of the driving transistor 32becomes Vofs−Vss. Here, if Vofs−Vss is not greater than the thresholdvoltage Vth of the driving transistor 32, then a next threshold valuecorrection process cannot be carried out. Therefore, the referencepotential Vofs and the second potential Vss are set so as to satisfy arelationship of Vofs−Vss>Vth.

A period from time t₃ to time t₄ is a threshold value correction periodT₃ within which a threshold value correction operation is carried out.Within the threshold value correction period T₃, at time t₃, thepotential of the power supply line DSL is changed over to the firstpotential Vcc by the power supply scanner 105, and a voltagecorresponding to the threshold voltage Vth is written into theaccumulating capacitor 33 connected between the gate and the source ofthe driving transistor 32. In particular, as the potential of the powersupply line DSL is changed over to the first potential Vcc, the sourcepotential Vs of the driving transistor 32 rises and the gate-sourcevoltage Vgs of the driving transistor 32 becomes equal to the thresholdvoltage Vth before time t₄ within the threshold value correction periodT₃.

It is to be noted that, since the potential Vcat is set so that thelight emitting element 34 is placed into a cutoff state within thethreshold value correction period T₃, the drain-source current Ids ofthe driving transistor 32 flows to the accumulating capacitor 33 sidebut not to the light emitting element 34 side.

Within a writing+mobility correction preparation period T₄ from time t₄to time t₆, the potential of the scanning line WSL is changed over fromthe high potential to the low potential. At this time, since thesampling transistor 31 is turned off, the gate of the driving transistor32 is placed into a floating state. However, since the gate-sourcevoltage Vgs of the driving transistor 32 is equal to the thresholdvoltage Vth, the driving transistor 32 is in a cutoff state.Accordingly, the drain-source current Ids does not flow to the drivingtransistor 32.

Then, at time t₅ after time t₄ before time t₆, the horizontal selector103 changes over the potential of the image signal line DTL from thereference potential Vofs to the signal potential Vsig which correspondsto a gradation.

Thereafter, within a writing+mobility correction period T₅ from time t₆to time t₇, writing of an image signal and a mobility correctionoperation are carried out at the same time. In particular, within theperiod from time t₆ to time t₇, the potential of the scanning line WSLis set to the high potential. Consequently, the signal potential Vsigcorresponding to a gradation is written into the accumulating capacitor33 in such a form that it is added to the threshold voltage Vth.Further, the voltage ΔV for mobility correction is subtracted from thevoltage retained in the accumulating capacitor 33.

Here, the gate-source voltage Vgs of the driving transistor 32 at timet₇ after the writing+mobility correction period T₅ comes to an end isVsig+Vth−ΔV.

At time t₇ after the writing +mobility correction period T₅ comes to anend, the potential of the scanning line WSL is changed back to the lowpotential. Consequently, the gate of the driving transistor 32 isdisconnected from the image signal line DTL and consequently is placedinto a floating state. When the gate of the driving transistor 32 is ina floating state, since the accumulating capacitor 33 is connectedbetween the gate and the source of the driving transistor 32, also thegate potential Vg varies in an interlocking relationship with thevariation of the source potential Vs of the driving transistor 32. Theoperation of the gate potential Vg of the driving transistor 32 whichvaries in an interlocking relationship with the variation of the sourcepotential Vs is a bootstrap operation by the accumulating capacitor 33.

After time t₇, as the gate of the driving transistor 32 is placed into afloating state and the drain-source current Ids of the drivingtransistor 32 begins to flow as driving current to the light emittingelement 34, the anode potential of the light emitting element 34 risesin response to the driving current Ids. Also the gate-source voltage Vgof the driving transistor 32 rises similarly by a bootstrap operation.In particular, the gate potential Vg and the source potential Vs of thedriving transistor 32 rise while the gate-source voltage Vgs of thedriving transistor 32, which is equal to Vsig+Vth−ΔV, is kept fixed inresponse to the signal potential Vsig of the image signal line DTL.Then, when the anode potential of the light emitting element 34 exceedsVthel+Vcat, the light emitting element 34 begins to emit light.

At the point of time t₇ after the writing+mobility correction period T₅comes to an end, the correction of the threshold voltage Vth and themobility μ is completed already, and therefore, the luminance of lightto be emitted from the light emitting element 34 is not influenced by adispersion of the threshold voltage Vth or the mobility p of the drivingtransistor 32. In particular, the light emitting element 34 emits lightwith a light luminance equal among the pixels in response to the signalpotential Vsig without being influenced by a dispersion of the thresholdvoltage Vth or the mobility μ of the driving transistor 32.

Then, at time t₈ after a predetermined period of time elapses after timet₇, the potential of the image signal line DTL is dropped to thereference potential Vofs from the signal potential Vsig.

In each of the pixels 101 of the EL panel 100, the light emittingelement 34 can be driven to emit light without being influenced by thethreshold voltage Vth or the mobility μ of the driving transistor 32 insuch a manner as described above. Accordingly, with the displayapparatus 1 which uses the EL panel 100, a display image of high qualitycan be obtained.

Now, before a pattern structure at a thin film transistor portion of thepixel 101 of the EL panel 100 is described, a pattern structure of athin film transistor portion hitherto known is described.

It is to be noted that, if a pattern structure at a thin film transistorportion of the pixel 101 of the EL panel 100 is compared with a patternstructure of a thin film transistor portion hitherto known, then it isdifferent in the location of several films. In other words, since theconfiguration itself of films formed on a substrate is not differentamong them, description of the pattern structure of a thin filmtransistor portion hitherto known shown in FIGS. 5 and 6 is given usingreference characters similar to those of the pixel 101 of the EL panel100.

[Cross Section at a Driving Transistor 32 Portion of a Pixel 101Hitherto Known]

FIG. 5 shows a cross section at a driving transistor 32 portion of thepixel 101 of an EL panel 100X hitherto known.

Referring to FIG. 5, in the EL panel 100X, a gate electrode 72 of adriving transistor 32 is formed on a supporting substrate 71 made of amaterial such as glass. A polycrystalline silicon film 74 as asemiconductor layer which forms a channel region is formed on the upperside of the gate electrode 72 with an insulating film 73 interposedtherebetween.

A source electrode 75 and a drain electrode 76 are formed on the upperside of the polycrystalline silicon film 74. The source electrode 75 isconnected at a contact portion 75 a thereof to the polycrystallinesilicon film 74. The drain electrode 76 is connected at a contactportion 76 a thereof to the polycrystalline silicon film 74. Theinsulating film 73 is interposed between the source electrode 75 and thepolycrystalline silicon film 74 and between the drain electrode 76 andthe polycrystalline silicon film 74 except the contact portions 75 a and76 a.

A flattening film 77 is laminated on the source electrode 75 and thedrain electrode 76, and an anode electrode 78 which is a reflectingelectrode is formed on the flattening film 77. The anode electrode 78 isconnected at a contact portion 78 a thereof to the source electrode 75.

An organic EL film not shown which is a light emitting layer foremitting light of a predetermined color from among red, green and blueis formed on the upper side of the anode electrode 78, and a cathodeelectrode not shown is formed on the organic EL layer.

[Problem of the Pixel Hitherto Known]

In the pixel 101 hitherto known, the contact portion 78 a which is aconnecting layer between the anode electrode 78 and the source electrode75 and the contact portion 75 a which is a connecting layer between thesource electrode 75 and the polycrystalline silicon film 74 are disposedat positions spaced from each other in a planar direction. This isbecause, if the distance of an inclined portion for connecting theconductive layers to each other, which is hereinafter referred to offsetportion is long, then the possibility that contact failure such as astep may appear becomes high. The step signifies a phenomenon that afilm formed at an offset portion becomes so thin that it gives rise todisconnection as seen in FIG. 6.

As a material for the anode electrode 78, a film of a laminationstructure wherein, for example, a transparent conductive film such as anITO film is laminated on the opposite faces of a thin film of aluminum(Al) or silver (Ag) in such a manner as to sandwich the thin film. Whilea film of a lamination structure which uses silver has a merit that itachieves a higher reflection factor than aluminum, from a characteristicof the material, however, a step of the silver thin film or a step of atransparent conductor film is likely to occur. If a step or filmformation failure of the silver thin film or a transparent conductivefilm appears, then the connection resistance becomes high or the silveris corroded, resulting in failure in achievement of good contact.

Customarily, in order to prevent such contact failure, the contactportion 78 a and the contact portion 75 a are disposed at positionsspaced from each other in a planar direction as seen in FIG. 5.

However, to dispose the contact portion 78 a and the contact portion 75a at positions spaced from each other in a planar direction involves alarge layout area and makes an obstacle where it is intended to reducethe area of one pixel. In other words, since the contact portion 78 aand the contact portion 75 a are spaced from each other in a planardirection, there is a problem that it is difficult to achieve a highdefinition of the EL panel. Further, where there is no necessity tochange the area of one pixel, since the layout area including thecontact portion 78 a and the contact portion 75 a becomes great, itcannot be avoided to reduce the layout area of the other components.This deteriorates the display performance in terms of improvement inluminance or driving with saved power.

[Top Plan of the Pixel 101 Hitherto Known]

In the following description, a metal layer which is positioned on thelowermost face in the cross sectional view of FIG. 5 and forms the gateelectrode 72 is referred to as lower face metal layer for theconvenience of description. Further, the semiconductor layer which formsthe polycrystalline silicon film 74 is hereinafter referred to assilicon layer, the metal layer which forms the source electrode 75 andthe drain electrode 76 as intermediate metal layer, and the metal layerwhich forms the anode electrode 78 as upper face metal layer.

Referring to FIG. 7, the scanning line WSL10 and the power supply lineDSL10 which traverse the pixels 101 are formed from the intermediatemetal layer. Further, the image signal line DTL10 which traverses thepixels 101 is formed, at portions thereof which do not intersect withthe scanning line WSL10 and the power supply line DSL10, from theintermediate metal layer but is formed, at portions thereof whichintersect with the scanning line WSL10 and the power supply line DSL10,from the lower face metal layer.

If attention is paid to a sampling transistor 31, then the drainelectrode and the source electrode of the sampling transistor 31 areformed from the intermediate metal layer, and the gate electrode of thesampling transistor 31 is formed from the lower face metal layer.Further, a silicon layer is formed between the drain electrode andsource electrode and the gate electrode of the sampling transistor 31.The silicon layer is connected to the intermediate metal layer as thedrain electrode and the source electrode of the sampling transistor 31.

If attention is paid to a driving transistor 32, then the drainelectrode and the source electrode of the driving transistor 32 areformed from the intermediate metal layer, and the gate electrode of thedriving transistor 32 is formed from the lower face metal layer.Further, a silicon layer is formed between the drain electrode andsource electrode and the gate electrode of the driving transistor 32.The silicon layer is connected to the intermediate metal layer as thedrain electrode and the source electrode of the driving transistor 32.

The intermediate metal layer which forms the drain electrode of thedriving transistor 32 is connected to the silicon layer as thepolycrystalline silicon film 74 through the contact portion 76 a. Theintermediate metal layer which forms the source electrode of the drivingtransistor 32 is connected to the silicon layer as the polycrystallinesilicon film 74 through the contact portion 75 a. Further, theintermediate metal layer which forms the source electrode of the drivingtransistor 32 is connected to the anode electrode 78 through the contactportion 78 a.

The accumulating capacitor 33 is formed from the lower face metal layerand the silicon layer which are disposed in an opposing relationship toeach other. One of the electrodes of the accumulating capacitor 33formed from the lower face metal layer is connected to the sourceelectrode of the sampling transistor 31 through the intermediate metallayer. The other electrode of the accumulating capacitor 33 formed fromthe silicon layer is connected to the intermediate metal layer whichforms the source electrode of the driving transistor 32. Since theintermediate metal layer which forms the source electrode of the drivingtransistor 32 is connected to the anode electrode 78 as described above,after all the other electrode of the accumulating capacitor 33 formedfrom the silicon layer is connected to the anode electrode 78.

Also the auxiliary capacitor 35 is formed from the lower face metallayer and the silicon layer which are disposed in an opposingrelationship to each other. Since one of the electrodes of the auxiliarycapacitor 35 is formed from the silicon layer common to the otherelectrode of the accumulating capacitor 33, it is connected to the anodeelectrode 78. The other electrode of the auxiliary capacitor 35 isconnected to the intermediate metal layer through a contact portion 79a, and the intermediate metal layer is connected to the anode electrode78 through a contact portion 80 a. Here, the potential of the contactportion 78 a connected through the contact portion 80 a electrically isthe potential Vcat.

The pixel 101 of the EL panel 100X hitherto known is configured in sucha manner as described above, and the contact portion 75 a and thecontact portion 78 a are positioned in a spaced relationship from eachother. Therefore, the intermediate metal layer which forms the sourceelectrode of the driving transistor 32 and has the two contact portions75 a and 78 a has a large area.

Further, since the contact portions 79 a and 80 a are positioned in aspaced relationship from each other, also the intermediate metal layerwhich has the contact portions 79 a and 80 a has a large area.

Accordingly, the disposition configuration hitherto known has a problemin that it is difficult to achieve a high definition of an EL panel oralternatively deterioration in function such as driving by improvementin luminance or by power saving is invited.

Thus, a first embodiment of the pixel 101 which is adopted in the ELpanel 100 to which the present invention is applied is described.

First Embodiment [Cross Section at a Driving Transistor 32 Portion ofthe Pixel 101 of the EL Panel 100]

FIG. 8 shows a cross section at a driving transistor 32 portion of thepixel 101 of the first embodiment.

Referring to FIG. 8, in the pixel 101 shown, a contact portion 78 bwhich is a connecting portion between the anode electrode 78 and thesource electrode 75 of the driving transistor 32 and a contact portion75 b which is a connecting portion between the source electrode 75 andthe polycrystalline silicon film 74 are disposed at the same position ina planar direction. In other words, the contact portions 78 b and 75 bare disposed such that the center positions thereof as viewed from aboveare same as each other, that is, are coaxial.

Consequently, the area of the intermediate metal layer having thecontact portions 75 b and 78 b can be reduced, and the area in one pixelcan be utilized effectively or the area of one pixel can be reduced.

However, in the disposition of FIG. 8, another offset portion isprovided on an offset portion. More particularly, the anode electrode 78is connected to an inclined portion at which the source electrode 75 isconnected to the polycrystalline silicon film 74. Therefore, it can berecognized that a step is liable to appear.

Second Embodiment

Thus, a second embodiment of the pixel 101 of the EL panel 100 whichsuppresses appearance of contact failure better is described.

[Cross Section at a Driving Transistor 32 Portion of the Pixel 101 ofthe EL Panel 100]

FIG. 9 shows a cross section at a driving transistor 32 portion of thepixel 101 of the second embodiment.

Also in the pixel 101 of FIG. 9, a contact portion 78 c which is aconnecting portion between the anode electrode 78 and the sourceelectrode 75 of the driving transistor 32 and a contact portion 75 cwhich is a connecting portion of the source electrode 75 and thepolycrystalline silicon film 74 are disposed at the same position in aplanar direction.

Further, in the pixel 101 of FIG. 9, a film face on the upper side ofthe source electrode 75 which forms the contact portion 75 c has aflattened face, and the source electrode 75 and the anode electrode 78are connected as the contact portion 78 c to each other on the flattenedface. In other words, the faces of the source electrode 75 and the anodeelectrode 78 contact with each other.

Further, the opening width L1 of the flattened face on the sourceelectrode 75 side on the same plan which forms the contact portion 78 cis greater than the opening width L2 of the flattened face of the anodeelectrode 78.

[Top Plan of the Contact Portion 78 c]

FIG. 10 shows top plans of the contact portion 78 c.

The contact portion 78 c can be formed in a quadrangular shape or acircuit shape as seen in FIG. 10. In this instance, also the flattenedface on the source electrode 75 side has the same shape, that is, thesame quadrangular shape or circular shape, with the contact portion 78c.

Meanwhile, the opening width L1 of the flattened face on the sourceelectrode 75 side can be formed greater, for example, by more than 1 μmthan the opening width L2 of the flattened face of the anode electrode78.

Where the upper side film face of the source electrode 75 is providedwith a flattened face and the anode electrode 78 and the sourceelectrode 75 are connected to each other on the flattened face asdescribed above, a connecting face similar to that at the known contactportion 78 a shown in FIG. 5 is assured. Accordingly, contact failurecan be prevented.

[Top Plan of the EL Panel 100]

FIG. 11 shows a top plan of the EL panel 100 of the second embodiment.It is to be noted that, in the example of FIG. 11, the contact portions75 c and 78 c are formed in a quadrangular shape.

Referring to FIG. 11, the contact portions 75 c and 78 c are disposed atone place at a position on the lower side of the plan of the figure ofthe driving transistor 32. Consequently, where the example in FIG. 11 iscompared with that of FIG. 7, the intermediate metal layer which has thecontact portions 75 c and 78 c has a reduced area.

Also contact portions 79 c and 80 c which correspond to the contactportions 79 a and 80 a shown in FIG. 7, respectively, are disposed atthe same position in a planar direction similarly. Therefore, theintermediate metal layer of them has a reduced area.

Since the intermediate metal layer having the contact portions 75 c and78 c and the intermediate metal layer having the contact portions 79 cand 80 c individually have reduced areas, the area of the auxiliarycapacitor 35 in FIG. 11 can be increased in comparison with that in FIG.7.

As described above, with the EL panel 100, the contact portion 75 cbetween the silicon layer or first conductive layer and the intermediatemetal layer or second conductive layer and the contact portion 78 cbetween the intermediate metal layer and the upper face metal layer orthird conductive layer are disposed at the same position in a planardirection. Consequently, the area of the intermediate layer having thetwo contact portions, that is, the contact portions 75 c and 78 c, canbe reduced, and the area of one pixel can be reduced. On the other hand,where there is no necessity to change the area of one pixel, the displayperformance can be improved.

Further, with the EL panel 100, the contact portion 75 c between thesilicon layer or first conductive layer and the intermediate metal layeror second conductive layer has a flattened face, and the contact portion78 c between the intermediate layer and the upper face metal layer orthird conductive layer is disposed on the flattened face. Consequently,not only where the material of the anode electrode 78 is aluminum (Al)but also where a film of a laminate structure using silver is adopted,contact failure such as a step can be prevented.

The embodiment of the present invention is not limited to the specificembodiment described hereinabove but can be modified in various mannerswithout departing from the subject matter of the present invention.

Although the pixel 101 is configured from two transistors such as thesampling transistor 31 and the driving transistor 32 and two capacitorssuch as the accumulating capacitor 33 and the auxiliary capacitor 35,also it is possible to adopt a different circuit configuration.

For example, since the auxiliary capacitor 35 is provided in order tocomplement a capacitance component of the light emitting element 34, itcan be omitted. Accordingly, the pixel 101 can be configured from twotransistors and a single transistor such as the accumulating capacitor33, that is, as a 2Tr/1C pixel circuit.

Further, as a different circuit configuration of the pixel 101, forexample, the following circuit configuration can be adopted. Inparticular, it is possible to adopt a configuration which includes firstto third transistors in addition to a 2Tr/1C pixel circuit, that is,five transistors and one capacitor. The configuration just described ishereinafter referred to as 5Tr/1C pixel circuit. Where the pixel 101adopts the 5Tr/1C pixel circuit, the signal potential to be suppliedfrom the horizontal selector 103 to the sampling transistor 31 throughthe image signal line DTL10 is fixed to the signal potential Vsig. As aresult, the sampling transistor 31 only functions to switch supply ofthe signal potential Vsig to the driving transistor 32. Further, thepotential to be supplied to the driving transistor 32 through the powersupply line DSL10 is fixed to the first potential Vcc. Further, thefirst transistor newly added switches supply of the first potential Vccto the driving transistor 32. The second transistor switches supply ofthe second potential Vss to the driving transistor 32. Further, thethird transistor switches supply of the reference potential Vofs to thedriving transistor 32.

Further, as another different circuit configuration of the pixel 101, anintermediate configuration between the 2Tr/1C pixel circuit and the5Tr/1C pixel circuit may be adopted. In particular, a configurationwhich includes four transistors and one capacitor, that is, a 4Tr/1Cpixel circuit, or a configuration which includes three transistors andone capacitor, that is, a 3Tr/1C pixel circuit, can be adopted. The4Tr/1C pixel circuit may be configured such that, for example, the thirdtransistor of the 5Tr/1C pixel circuit is omitted and the signalpotential to be supplied from the horizontal selector 103 to thesampling transistor 31 is formed as a pulse signal using the signalpotential Vsig and the reference potential Vofs.

The 3Tr/1C pixel circuit, 4Tr/1C pixel circuit and 5Tr/1C pixel circuitmay additionally include the auxiliary capacitor 35 similarly to the2Tr/1C circuit.

The present application contains subject matter related to thatdisclosed in Japanese Priority Patent Application JP 2009-097083 filedin the Japan Patent Office on Apr. 13, 2009, the entire content of whichis hereby incorporated by reference.

It should be understood by those skilled in the art that variousmodifications, combinations, sub-combinations and alterations may occurdepending on design requirements and other factors insofar as they arewithin the scope of the appended claims or the equivalents thereof.

What is claimed is:
 1. A display apparatus comprising: a gate electrodeof a driving transistor, a source region of the driving transistor is aportion of a polysilicon layer; a first electrode of an accumulatingcapacitor that is physically connected to the gate electrode of thedriving transistor, the gate electrode of the driving transistor is aportion of a lower layer and the first electrode of the accumulatingcapacitor is another portion of the lower layer; a first electrode of anadditional capacitor, a different portion of the lower layer is thefirst electrode of the additional capacitor; a second electrode of theadditional capacitor, a different portion of the polysilicon layer isthe second electrode of the additional capacitor; a second electrode ofthe accumulating capacitor that is physically connected to the secondelectrode of the additional capacitor, another portion of thepolysilicon layer is the second electrode of the accumulating capacitor;an intermediate layer between the lower layer and an upper layer, theintermediate layer is between the upper layer and the polysilicon layer;and a first contact hole that at least partially overlaps a secondcontact hole in a plan view of a display panel, the second contact holein the plan view of the display panel is larger than the first contacthole, wherein a portion of the upper layer in the first contact hole isphysically connected to the portion of the intermediate layer, whereinthe lower layer is a metal and the upper layer is a conductive layerthat includes silver, the intermediate layer is a metal layer.